GaN Power Device Market to Witness Huge Growth from 2014-2022 and Focusing on Top Key Players – Efficient Power Conversion Corporation (EPC), GaN Systems, On Semiconductors, Panasonic Corporation, VisIC, Texas Instruments , Toshiba Corporation
GaN power device was valued at $16 million in 2015 and is projected to reach $273 million by 2022, growing at a CAGR of 49.8% from 2016 to 2022. Gallium nitride (GaN) transistors have evolved as an enhanced performance substitute of silicon-based transistors, owing to their ability of fabricating more compact devices for a given resistance value and breakdown voltage as compared to silicon devices.
GaN power devices can attain extremely low resistance and high-frequency switching. These properties are exploited in high-efficiency power supplies, electric vehicle (EV), hybrid electric vehicle (HEV), photovoltaic inverters, and RF switching. These devices are applicable in power supplies for server, IT equipment, high-efficiency & stable power supplies, and EV & HEV devices.
Major companies profiled in the report include:
Efficient Power Conversion Corporation (EPC), GaN Systems, On Semiconductors, Panasonic Corporation, VisIC, Texas Instruments , Toshiba Corporation, Fujitsu Limited, Infineon Technologies AG, and Taiwan Semiconductor Manufacturing Company.
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The growth of the GaN power device market is driven by increase in demand for GaN in radio frequency equipment; rise in adoption in the telecommunication industry; and surge in demand for AC fast charger, LiDAR, and wireless power. Moreover, these devices are more advantageous as compared to silicon devices, thus fueling the growth of the market. However, preference of silicon carbide (SiC) in high-voltage semiconductor applications restraint the market growth. Requirement of GaN power devices in electric and hybrid vehicle provides new opportunities for the players operating in the market.
GaN Power Discrete Devices
GaN Power ICs
GaN Power Modules
BY INDUSTRY VERTICAL:
IT & Telecommunication
Aerospace & Defense
The global GaN power devices market is segmented based on device, industry vertical, and geography. On the basis of device, it is categorized into GaN power discrete devices, GaN power ICs, and GaN power modules. By industry vertical, it is classified into consumer electronics, IT & telecommunication, automotive, aerospace & defense, and others. Geographically, it is analyzed across North America (U.S., Mexico, and Canada), Europe (UK, Germany, France, and rest of Europe), Asia-Pacific (China, Japan, Taiwan, South Korea, and rest of Asia-Pacific), and LAMEA (Latin America, Middle East, and Africa).
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Fundamentals of Table of Content:
1 Report Overview
1.1 Study Scope
1.2 Key Market Segments
1.3 Players Covered
1.4 Market Analysis by Type
1.5 Market by Application
1.6 Study Objectives
1.7 Years Considered
2 Global Growth Trends
2.1 GaN Power Device Market Size
2.2 GaN Power Device Growth Trends by Regions
2.3 Industry Trends
3 Market Share by Key Players
3.1 GaN Power Device Market Size by Manufacturers
3.2 GaN Power Device Key Players Head office and Area Served
3.3 Key Players GaN Power Device Product/Solution/Service
3.4 Date of Enter into GaN Power Device Market
3.5 Mergers & Acquisitions, Expansion Plans
4 Breakdown Data by Product
4.1 Global GaN Power Device Sales by Product
4.2 Global GaN Power Device Revenue by Product
4.3 GaN Power Device Price by Product
5 Breakdown Data by End User
5.2 Global GaN Power Device Breakdown Data by End User
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